2731-20r1 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. 2731-20 20watts, 36 volts, 100us, 10% radar 2700-3100 mhz general description the 2731-20is an internally matched, common base bipolar transistor capable of providing 20watts of pulsed rf output power at 100 pulse width, 10% duty factor across the 2700 to 3100 mhz band. the transistor prematch and test fixture has been optimized through the use of 10 ohm trl analysis. this ceramic sealed transistor is specifically designed for s-band radar applications. it utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. case outline 55kcr-1 common base absolute maximum ratings maximum power dissipation device dissipation @ 25 c 1 70 w maximum voltage and current collector to base voltage (bv ces ) 65 v emitter to base voltage (bv ebo ) 3.0 v peak collector current (i c ) 1.85 a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power output f=2700-3100 mhz 20 w p g power gain pulse width = 100s 8.2 db c collector efficiency duty factor = 10 % 45 % r l return loss power input = 3w -7 db vswr-s load mismatch stability vcc = +36v 1.5:1 vswr-t load mismatch tolerance f = 2700, 2900, 3100 mhz 3:1 functional characteristics @ 25 c ices collector to emitter leakage vce=40v 1.5 ma bv ces collector to emitter breakdown ic = 10 ma 65 v jc 1 thermal resistance 2.5 c/w
2731-20r1 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. 2731-20
2731-20r1 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct.
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